cas 13463-67-7 titanium dioxide factories
Sachtleben. Material Safety Data Sheet (PDF). Retrieved 29 April 2014..
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Oxygen Deficiency and Resistive Switching Mechanisms
The realization of neuromorphic resistive memory in TiO2 thin films (Strukov et al., 2008) marked an important milestone in the search for bio-inspired technologies (Chua and Kang, 1976). Many research proposals urged a focus on memristivity as the common feature of two electrical models: (i) electromigration of point defects in titanium oxide systems (Baiatu et al., 1990; Jameson et al., 2007) and (ii) voltage-gated ionic channels in the membranes of biological neurons (Hodgkin and Huxley, 1952). In this regard, memristors functionally mimic the synaptic plasticity of biological neurons, and thus can be implemented in artificial and hybrid neural networks. This includes a new paradigm of future computing systems (Zidan, 2018) and biocompatible electronics such as biointerfaces and biohybrid systems (Chiolerio et al., 2017).
