cas 13463-67-7

As they mimic the synapses in biological neurons, memristors became the key component for designing novel types of computing and information systems based on artificial neural networks, the so-called neuromorphic electronics (Zidan, 2018; Wang and Zhuge, 2019; Zhang et al., 2019b). Electronic artificial neurons with synaptic memristors are capable of emulating the associative memory, an important function of the brain (Pershin and Di Ventra, 2010). In addition, the technological simplicity of thin-film memristors based on transition metal oxides such as TiO2 allows their integration into electronic circuits with extremely high packing density. Memristor crossbars are technologically compatible with traditional integrated circuits, whose integration can be implemented within the complementary metal–oxide–semiconductor platform using nanoimprint lithography (Xia et al., 2009). Nowadays, the size of a Pt-TiOx-HfO2-Pt memristor crossbar can be as small as 2 nm (Pi et al., 2019). Thus, the inherent properties of memristors such as non-volatile resistive memory and synaptic plasticity, along with feasibly high integration density, are at the forefront of the new-type hardware performance of cognitive tasks, such as image recognition (Yao et al., 2017). The current state of the art, prospects, and challenges in the new brain-inspired computing concepts with memristive implementation have been comprehensively reviewed in topical papers (Jeong et al., 2016; Xia and Yang, 2019; Zhang et al., 2020). These reviews postulate that the newly emerging computing paradigm is still in its infancy, while the rapid development and current challenges in this field are related to the technological and materials aspects. The major concerns are the lack of understanding of the microscopic picture and the mechanisms of switching, as well as the unproven reliability of memristor materials. The choice of memristive materials as well as the methods of synthesis and fabrication affect the properties of memristive devices, including the amplitude of resistive switching, endurance, stochasticity, and data retention time.

...
cas 13463-67-72025-08-15 00:58
2801

The unique properties of titanium dioxide extend into the field of medicine as well. It is being researched for use in cancer treatment due to its ability to generate reactive oxygen species that can target and destroy cancer cells. Moreover, when used as a coating on medical implants, titanium dioxide helps prevent bacterial growth and promotes osseointegration Moreover, when used as a coating on medical implants, titanium dioxide helps prevent bacterial growth and promotes osseointegration Moreover, when used as a coating on medical implants, titanium dioxide helps prevent bacterial growth and promotes osseointegration Moreover, when used as a coating on medical implants, titanium dioxide helps prevent bacterial growth and promotes osseointegrationjual titanium dioxide.

...
cas 13463-67-72025-08-15 00:58
771
{随机栏目} 2025-08-15 01:20 761

  • The leaching of the electrolytic zinc acid leaching slag: 1500 ml of ammonia-ammonium sulphate solution is used as the ammonia immersion liquid, wherein the ammonia concentration is 6. Omol / ammonium sulfate molar concentration is 0. 9mol / L, added per cubic meter of ammonia immersion liquid 0. 075kg of sodium dodecylbenzenesulfonate, 0. 45kg of sodium fluorosilicate, 0.75kg of dicyandiamide. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 %), added to the above ammonia-ammonium sulfate immersion liquid for three-stage leaching, each leaching time is 2 hours, after solid-liquid separation, 1450ml final immersion liquid (taken away in the remaining liquid slag), zinc leaching The rate of 90. 02%; the final solution containing zinc 65. 6g / L; containing S0 4 2 - 69. 64g / L ;

    {随机栏目} 2025-08-14 23:11 2462

    • Latest articles