industrial grade tio2 factory

Titanium dioxide (TiO2). Titanium dioxide is the most common white pigment used today. As a pigment, titanium dioxide is unique because it combines both high colouring and high opacifying capacity. This is mainly due to its high refractive index (2.7). Furthermore, titanium dioxide is an excellent UV absorber (it is used in sun protective creams). Some typical properties are: density 3.3-4.25 g/cm3; pH of water suspension 3.5-10.5; particle size 8–300 nm; oil absorption 10–45 g/100 g; specific surface area 7–160 m2/g. Most titanium dioxide is produced from the rutile (TiO2) or ilmenite (titanate of ferrous iron). Titanium dioxide can be obtained using different processes.

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Apart from proximately neuromorphic technologies, TiO2-based memristors have also found application in various sensors. The principle of memristive sensorics is based on the dependency of the resistive switching on various external stimuli. This includes recording of mechanical energy (Vilmi et al., 2016), hydrogen detection (Hossein-Babaei and Rahbarpour, 2011Strungaru et al., 2015Haidry et al., 2017Vidiš et al., 2019), γ-ray sensing (Abunahla et al., 2016), and various fluidic-based sensors, such as sensors for pH (Hadis et al., 2015a) and glucose concentration (Hadis et al., 2015b). In addition, TiO2 thin films may generate photoinduced electron–hole pairs, which give rise to UV radiation sensors (Hossein-Babaei et al., 2012). Recently, the biosensing properties of TiO2-based memristors have been demonstrated in the detection of the bovine serum albumin protein molecule (Sahu and Jammalamadaka, 2019). Furthermore, this work has also demonstrated that the introduction of an additional graphene oxide layer may effectively prevent the growth of multidimensional and random conductive paths, resulting in a lower switching voltage, better endurance, and a higher resistance switching ratio. This opens up a new horizon for further functional convergence of metal oxides and two-dimensional memristive materials and interfaces (Zhang et al., 2019a).

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As they mimic the synapses in biological neurons, memristors became the key component for designing novel types of computing and information systems based on artificial neural networks, the so-called neuromorphic electronics (Zidan, 2018Wang and Zhuge, 2019Zhang et al., 2019b). Electronic artificial neurons with synaptic memristors are capable of emulating the associative memory, an important function of the brain (Pershin and Di Ventra, 2010). In addition, the technological simplicity of thin-film memristors based on transition metal oxides such as TiO2 allows their integration into electronic circuits with extremely high packing density. Memristor crossbars are technologically compatible with traditional integrated circuits, whose integration can be implemented within the complementary metal–oxide–semiconductor platform using nanoimprint lithography (Xia et al., 2009). Nowadays, the size of a Pt-TiOx-HfO2-Pt memristor crossbar can be as small as 2 nm (Pi et al., 2019). Thus, the inherent properties of memristors such as non-volatile resistive memory and synaptic plasticity, along with feasibly high integration density, are at the forefront of the new-type hardware performance of cognitive tasks, such as image recognition (Yao et al., 2017). The current state of the art, prospects, and challenges in the new brain-inspired computing concepts with memristive implementation have been comprehensively reviewed in topical papers (Jeong et al., 2016Xia and Yang, 2019Zhang et al., 2020). These reviews postulate that the newly emerging computing paradigm is still in its infancy, while the rapid development and current challenges in this field are related to the technological and materials aspects. The major concerns are the lack of understanding of the microscopic picture and the mechanisms of switching, as well as the unproven reliability of memristor materials. The choice of memristive materials as well as the methods of synthesis and fabrication affect the properties of memristive devices, including the amplitude of resistive switching, endurance, stochasticity, and data retention time.

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{随机栏目} 2025-08-14 01:39 808