When used in food specifically, titanium dioxide is known as an additive called E171 and can be found in products like candy, chocolate, coffee creamer, cake decorations, chewing gum and even vitamin supplements. E171 is often used as coloring additive in foods, to lend the processed item a natural whiteness and opacity — such as in Skittles candy, where it's used as a white base to help give the candies their signature bright, colorful hue.

lithopone supplier 30% has a lower coverage power than titanium dioxide. For this reason, lithopone supplier 30% can only partially substitute titanium dioxide, between 5 and 40%. 

JECFA also evaluated estimates of dietary exposure to titanium dioxide, estimating the maximum 95^th percentile of exposure to be 10 mg/kg BW per day. Overall, considering the low oral absorption of titanium dioxide as a food additive, the committee reaffirmed the ADI “not specified” that was established at the 13^th meeting.

The basic scenario of resistive switching in TiO₂ (Jameson et al., 2007) assumes the formation and electromigration of oxygen vacancies between the electrodes (Baiatu et al., 1990), so that the distribution of concomitant n-type conductivity (Janotti et al., 2010) across the volume can eventually be controlled by an external electric bias, as schematically shown in Figure 1B. Direct observations with transmission electron microscopy (TEM) revealed more complex electroforming processes in TiO₂ thin films. In one of the studies, a continuous Pt filament between the electrodes was observed in a planar Pt/TiO₂/Pt memristor (Jang et al., 2016). As illustrated in Figure 1C, the corresponding switching mechanism was suggested as the formation of a conductive nanofilament with a high concentration of ionized oxygen vacancies and correspondingly reduced Ti³⁺ ions. These ions induce detachment and migration of Pt atoms from the electrode via strong metal–support interactions (Tauster, 1987). Another TEM investigation of a conductive TiO₂ nanofilament revealed it to be a Magnéli phase Ti_nO_2n−1 (Kwon et al., 2010). Supposedly, its formation results from an increase in the concentrations of oxygen vacancies within a local nanoregion above their thermodynamically stable limit. This scenario is schematically shown in Figure 1D. Other hypothesized point defect mechanisms involve a contribution of cation and anion interstitials, although their behavior has been studied more in tantalum oxide (Wedig et al., 2015; Kumar et al., 2016). The plausible origins and mechanisms of memristive switching have been comprehensively reviewed in topical publications devoted to metal oxide memristors (Yang et al., 2008; Waser et al., 2009; Ielmini, 2016) as well as TiO₂ (Jeong et al., 2011; Szot et al., 2011; Acharyya et al., 2014). The resistive switching mechanisms in memristive materials are regularly revisited and updated in the themed review publications (Sun et al., 2019; Wang et al., 2020).